Quattrone Nanofabrication Facility (QNF), Penn
Graduate Student Fellow
Sep 2026 to present
I am developing an atomic layer deposition (ALD) process for aluminum-doped zinc oxide (AZO) as a replacement for ITO. I grow ZnO:Al films on a Cambridge S200 ALD tool, fit each film's optical response with spectroscopic ellipsometry in WVASE, and use XRD and my own Python analysis to tie doping level to film properties.
- 200 °C doping series from DEZ, TMA, and H2O at 99:1, 49:1, and 19:1 ZnO:Al cycle ratios.
- Ellipsometry fits give 85 to 88 nm film thickness at fit MSE below 7.
- 0.2 eV Burstein-Moss band-edge shift (3.35 to 3.58 eV) and free-carrier absorption at 19:1, consistent with literature.